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| S DM40N02 S amHop Microelectronics C orp. May ,2004 ver 1.1 N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( m W ) Max ID 3.8A R DS (ON) S uper high dense cell design for low R DS (ON). 44 @ V G S = 4.5V 55 @ V G S = 2.5V R ugged and reliable. S urface Mount P ackage. S O-8 1 ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ TJ=125 C b -P ulsed (300us Pulse Width) Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol VDS VGS ID IDM IS PD TJ, TS TG Limit 20 12 3.8 10.5 1.7 2.5 -55 to 150 Unit V V A A A W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 50 C /W 1 S DM40N02 E LE CTR ICAL CHAR ACTE R IS TICS (TA = 25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS c S ymbol Condition VGS = 0V, ID = 250uA VDS = 20V, VGS = 0V VGS = 8V, VDS =0V VDS = VGS, ID = 250uA VGS =4.5V, ID = 2.0A VGS =2.5V, ID = 1.0A VDS = 5V, VGS = 4.5V VDS = 10V, ID = 4.0A Min Typ C Max Unit 20 1 V uA 100 nA 0.7 30 40 8 17 710 300 80 V 44 m-ohm 55 m-ohm A S PF PF PF ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance DYNAMIC CHAR ACTE R IS TICS Input Capacitance Output Capacitance R everse Transfer Capacitance CISS COSS CRSS c VDS =8V, VGS = 0V f =1.0MHZ S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd VDD = 10V ID = 1A VGEN = 4.5V R L = 10 ohm RGEN = 6 ohm VDS =10V, ID = 4A VGS =4.5V 2 10 15 26 20 12 4 2 ns ns ns ns nC nC nC S DM40N02 E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted) Parameter 5 Diode Forward Voltage S ymbol VSD Condition VGS = 0V, Is =1.7A Min Typ Max Unit 0.72 1.2 V C DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Notes a.S urface Mounted on FR 4 Board, t <=10sec. b.Pulse Test:Pulse Width<= 300us, Duty Cycle<= 2%. c.Guaranteed by design, not subject to production testing. 25 V G S =5,4,3,2V 20 20 25 ID, Drain C urrent(A) ID, Drain C urrent (A) 15 15 10 V G S =1.5V 5 0 10 T j=125 C 5 -55 C 0 0.0 25 C 0 1 2 3 4 5 6 0.5 1 1.5 2 2.5 3 V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics R DS (ON), On-R es is tance(Ohms ) (Normalized) 10 12 3000 2500 1.8 1.6 1.4 1.2 1.0 0.8 F igure 2. Trans fer C haracteris tics V G S =4.5V ID=4A C , C apacitance (pF ) 2000 1500 1000 500 0 C is s C os s C rs s 0 2 4 6 8 0.6 -50 0 50 100 150 V DS , Drain-to S ource Voltage (V ) T j, J unction T emperature ( C ) F igure 3. C apacitance F igure 4. On-R es is tance Variation with Temperature 3 S DM40N02 1.06 1.03 1.00 0.97 0.94 0.91 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=250uA B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.09 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ID=250uA 5 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 36 F igure 6. B reakdown V oltage V ariation with T emperature 20 gFS , T rans conductance (S ) 24 18 12 6 0 0 3 6 9 12 15 V DS =10V Is , S ource-drain current (A) 30 10 1 0 0.4 0.6 0.8 1.0 T J =25 C 1.2 1.4 IDS , Drain-S ource C urrent (A) V S D, B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent 5 ID, Drain C urrent (A) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 40 V G S , G ate to S ource V oltage (V ) 4 3 2 1 0 0 VDS =10V ID=4A 10 RD S ( ) ON L im it 10 10 0m s ms 11 DC 1s 0.1 0.03 VGS =4.5V S ingle P ulse T c=25 C 0.1 1 10 20 50 2 4 6 8 10 12 14 16 Qg, T otal G ate C harge (nC ) V DS , Drain-S ource V oltage (V ) F igure 9. G ate C harge F igure 10. Maximum S afe O perating Area 4 S DM40N02 V DD ton toff tr 90% 5 VG S R GE N V IN D G RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D 90% S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit F igure 12. S witching Waveforms 2 r(t),Normalized E ffective T ransient T hermal Impedance 1 Duty C ycle=0.5 0.2 0.1 0.1 0.05 0.02 S ingle P uls e 0.01 10 -4 P DM t1 1. 2. 3. 4. 10 -2 t2 R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 10 100 10 -3 10 -1 1 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 5 S DM40N02 PAC K AG E OUT LINE DIME NS IONS S O-8 1 L E D 0.015X45X A e 0.05 TYP. B 0.016 TYP. A1 0.008 TYP. C H S Y MB OLS A A1 D E H L MILLIME T E R S MIN 1.35 0.10 4.80 3.81 5.79 0.41 0X MAX 1.75 0.25 4.98 3.99 6.20 1.27 8X MIN 0.053 0.004 0.189 0.150 0.228 0.016 0X INC HE S MAX 0.069 0.010 0.196 0.157 0.244 0.050 8X 6 S DM40N02 SO-8 Tape and Reel Data SO-8 Carrier Tape unit:P PACKAGE SOP 8N 150O A0 6.40 B0 5.20 K0 2.10 D0 r1.5 (MIN) D1 r1.5 + 0.1 - 0.0 E 12.0 O0.3 E1 1.75 E2 5.5 O0.05 P0 8.0 P1 4.0 P2 2.0 O0.05 T 0.3 O0.05 SO-8 Reel UNIT:P TAPE SIZE 12 P REEL SIZE r330 M 330 O 1 N 62 O1.5 W 12.4 + 0.2 W1 16.8 - 0.4 H r12.75 + 0.15 K S 2.0 O0.15 G R V 7 |
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